N-channel 30V - 0.006??- 20A - PolarPAK-R STripFET-TM Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, moreover the double sides cooling package with ultra low junction to case thermal re

N-channel 30V - 0.0024ohm - 30A - PolarPAK STripFET Power MOSFET

文件：276.6 Kbytes Page：12 Pages

N-channel 30V - 0.006ohm - 20A - PolarPAK STripFET Power MOSFET

文件：267.26 Kbytes Page：12 Pages

N-channel 30V - 0.006廓 - 20A - PolarPAK짰 STripFET??Power MOSFET

文件：501.9 Kbytes Page：16 Pages

N-channel 30V - 0.006Ω - 20A - PolarPAK-R STripFET-TM Power MOSFET

N-channel 30V - 0.006ohm - 20A - PolarPAK STripFET Power MOSFET

文件：267.26 Kbytes Page：12 Pages

N-channel 30V - 0.006廓 - 20A - PolarPAK짰 STripFET??Power MOSFET

文件：501.9 Kbytes Page：16 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages