N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

包装：卷带（TR） 描述：MOSFET N-CH 600V 9A I2PAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon