型号 功能描述 生产厂家 企业 LOGO 操作
STI15NM60ND

N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d

STMICROELECTRONICS

意法半导体

STI15NM60ND

isc N-Channel MOSFET Transistor

文件:358.51 Kbytes Page:2 Pages

ISC

无锡固电

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件:313.88 Kbytes Page:2 Pages

ISC

无锡固电

STI15NM60ND产品属性

  • 类型

    描述

  • 型号

    STI15NM60ND

  • 功能描述

    MOSFET N-Ch, 600V-0.27ohms FDMesh 14A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-27 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
QFP
2500
绝对全新原装!现货!特价!请放心订购!
ST
2025+
TO220
3872
全新原厂原装产品、公司现货销售
ST
25+
QFP
4500
全新原装、诚信经营、公司现货销售!
ST
25+23+
TO262
73118
绝对原装正品现货,全新深圳原装进口现货
EC
122
全新原装 货期两周
ST/进口原
17+
TO-262
6200
ST
24+
QFP
6868
原装现货,可开13%税票
ST
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
ST(意法半导体)
24+
I2PAK
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ST
24+
TO220MONOC..
8866

STI15NM60ND数据表相关新闻