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STB15NM60ND中文资料
STB15NM60ND数据手册规格书PDF详情
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
STB15NM60ND产品属性
- 类型
描述
- 型号
STB15NM60ND
- 功能描述
MOSFET N-channel 600V, 14A FDMesh II
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMicroelectronics |
23+ |
TO263 |
50000 |
只做原装正品 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
STM |
23+ |
TO263 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ST |
24+ |
TO263-2 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST |
24+ |
TO-263 |
7500 |
||||
ST |
24+ |
09+ |
1 |
原装现货假一罚十 |
|||
ST |
24+ |
TO263 |
39500 |
进口原装现货 支持实单价优 |
|||
ADI |
23+ |
TO263-2 |
8000 |
只做原装现货 |
|||
ST意法 |
N/A |
21+ |
569888 |
原装正品现货 支持BOM配单! |
STB15NM60ND 价格
参考价格:¥8.8168
STB15NM60ND 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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