型号 功能描述 生产厂家 企业 LOGO 操作
STH9NA80FI

N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

STMICROELECTRONICS

意法半导体

STH9NA80FI

N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

STH9NA80FI

N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

STH9NA80FI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V (Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STH9NA80FI

N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

STMICROELECTRONICS

意法半导体

STH9NA80FI

N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

ETC

知名厂家

N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

STMICROELECTRONICS

意法半导体

STH9NA80FI产品属性

  • 类型

    描述

  • 型号

    STH9NA80FI

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

更新时间:2025-11-21 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEOUL
24+
NA/
2201
优势代理渠道,原装正品,可全系列订货开增值税票
ST
23+
TO-247
16900
正规渠道,只有原装!
ST
2511
TO
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
SEOULSEIM
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
SEOULSEIM
25+
NA
880000
明嘉莱只做原装正品现货
ST/意法
2450+
QFN
6540
只做原装正品现货!或订货假一赔十!
ST/意法
23+
TO-3P
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
06+
TO-247
2000
原装库存
24+
N/A
4500
ST
25+
TO-3P
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证

STH9NA80FI数据表相关新闻