N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V (Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

Trans MOSFET N-CH 800V 9.1A 3-Pin(3+Tab) TO-247

N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD

N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.85 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD