包装：盒 描述：HINGED STUD TERM M4 50A 600V 22- 连接器，互连器件 专用

板对板与背板连接器

汽车级N沟道40 V、0.8 mOhm典型值、200 A STripFET F7功率MOSFET，H2PAK-2封装

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 专为汽车应用设计并通过AEC-Q101认证 \n• 处于市面上最低的RDS(on)行列 \n• 出色的品质因数（FoM） \n• 较低的 Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力;

Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmeshTM DM6 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

丝印代码：400N4F6；Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs

文件：794.59 Kbytes Page：18 Pages

丝印代码：400N4F6；Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs

文件：794.59 Kbytes Page：18 Pages

超高压薄膜电容器

Switching applications

文件：848.5 Kbytes Page：19 Pages

Switching applications

文件：848.5 Kbytes Page：19 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

包装：散装 描述：HINGED STUD TERM M4 35A DUAL TER 连接器，互连器件 专用