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型号 功能描述 生产厂家 企业 LOGO 操作
STH33N20

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

STH33N20

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

STH33N20产品属性

  • 类型

    描述

  • 型号

    STH33N20

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

更新时间:2026-8-2 19:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMTEL
25+23+
0
13303
绝对原装正品全新进口深圳现货
25+
30
公司现货库存
24+
N/A
2500
Norsat
24+
模块
400
SAMTEC/砷泰
2550+
4580
只做原装正品现货或订货假一赔十!
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
22+
TO
6000
十年配单,只做原装
ST
26+
TO-247
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST/意法
26+
TO-3P
43600
全新原装现货,假一赔十
ST
2511
SSOP
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价

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