型号 功能描述 生产厂家 企业 LOGO 操作
STH33N20

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

STH33N20

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TPICAL RDS(on) = 0.073 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATAT AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UP

STMICROELECTRONICS

意法半导体

STH33N20产品属性

  • 类型

    描述

  • 型号

    STH33N20

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

更新时间:2026-3-16 21:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
TO-263
12500
原装正品支持实单
ST(意法半导体)
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
14+
H2PAK
3508
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
TO-3P
8560
受权代理!全新原装现货特价热卖!
TESLA
25+
DIP-7
30000
代理全新原装现货,价格优势
25+
30
公司现货库存
ST
26+
TO-263
60000
只有原装 可配单
ST
06+
TO-247
2000
原装库存
STM
22+
TO263
20000
公司只做原装 品质保障
24+
N/A
2500

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