丝印代码：GP7H60DF；Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

600 V、7 A高速沟槽栅场截止H系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coeffi • High speed switching \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 14A 88W TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Schottky Barrier Rectifier

文件：147.67 Kbytes Page：5 Pages

Schottky Barrier Rectifiers

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Schottky Barrier Rectifier

文件：147.67 Kbytes Page：5 Pages

Schottky Barrier Rectifier

文件：147.67 Kbytes Page：5 Pages