Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos • Maximum junction temperature: TJ= 175 °C\n• Tail-less switching off\n• VCE(sat)= 1.8 V (typ.) @ IC= 40 A• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance;

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 80A 283W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

丝印代码：GP40V60F；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.89413 Mbytes Page：24 Pages

40A LOW VF SCHOTTKY RECTIFIER

文件：2.27782 Mbytes Page：5 Pages

40A LOW VF SCHOTTKY RECTIFIER

文件：2.27782 Mbytes Page：5 Pages

丝印代码：GFW40V60DF；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.83352 Mbytes Page：21 Pages

丝印代码：GW40V60F；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.89413 Mbytes Page：24 Pages