Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

N-channel 100 V, 0.0085 Ohm typ., 40 A STripFET F7 Power MOSFET in TO-220FP package

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。\n • 极低的栅极电荷\n• 超低导通电阻• 低栅极输入电阻;

Isc N-Channel MOSFET Transistor

文件：282.42 Kbytes Page：2 Pages

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

丝印代码：DPAK；Isc N-Channel MOSFET Transistor

文件：295.7 Kbytes Page：2 Pages

Isc N-Channel MOSFET Transistor

文件：318.66 Kbytes Page：2 Pages