N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET

Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道950 V、1.1 Ω、7.2 A有齐纳管保护的SuperMESH™功率MOSFET，TO-220、TO-220FP和TO-247封装

N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET

Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET

Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a

N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET

Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a