T-Filter with TVS Diode Array For EMI Filtering and ESD Protection

Description Features Applications

EMI FILTER/TVS ARRAY

FEATURES ✔ ESD Protection > 25 kilovolts ✔ 175 Watts Peak Pulse Power per Line (tp = 8/20µs) ✔ Bidirectional EMI Filtering ✔ Low Insertion Loss: Up to 10MHz, -3db Roll-Off @ 40MHz ✔ Protects Up to Two (2) Data Lines ✔ RoHS Compliant in Lead-Free Versions APPLICATIONS ✔ Cellular Phones ✔ S

EMI/Filter TVS Array

• IEC 61000-4-2 (ESD): Air - 15kV, Contact - 8kV\n• IEC 61000-4-4 (EFT): 40A - 5/50ns\n• ESD Protection > 25 kilovolts\n• 175 Watts Peak Pulse Power per Line (tp = 8/20µs)\n• Bidirectional EMI Filtering\n• Low Insertion Loss: Up to 10MHz, -3db Roll-Off @ 40MHz\n• Protects Up to Two (2) Data Lines\n•;

emi filter/tvs array

文件：705.71 Kbytes Page：7 Pages

Compatible with IEC 61000-4-2 (ESD) Air 15kV, Contact 8kV

FEATURES ✔ ESD Protection > 25 kilovolts ✔ 175 Watts Peak Pulse Power per Line (tp = 8/20µs) ✔ Bidirectional EMI Filtering ✔ Low Insertion Loss: Up to 10MHz, -3db Roll-Off @ 40MHz ✔ Protects Up to Two (2) Data Lines ✔ RoHS Compliant in Lead-Free Versions APPLICATIONS ✔ Cellular Phones ✔ S

T-Filter with TVS Diode Array For EMI Filtering and ESD Protection

Description Features Applications

T-Filter with TVS Diode Array For EMI Filtering and ESD Protection

Description Features Applications

封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：卷带（TR） 描述：IC TVS ARRAY 2-UNI 100MW SC70-5 电路保护 TVS - 混合技术

emi filter/tvs array

文件：705.71 Kbytes Page：7 Pages

EMI FILTER/TVS ARRAY

文件：708.37 Kbytes Page：7 Pages

Compatible with IEC 61000-4-2 (ESD) Air 15kV, Contact 8kV

70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages

LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

文件：260.079 Kbytes Page：9 Pages

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages