SCHOTTKY RECTIFIER

 150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  Th

封装/外壳：TO-220-3 全封装，隔离接片 包装：散装 描述：DIODE ARRAY SCHOTTKY 60V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

Center tap configuration

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肖特基二极管

超低正向肖特基二极管

SCHOTTKY RECTIFIER

 150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  Th

封装/外壳：TO-220-3 全封装，隔离接片 包装：散装 描述：DIODE SCHOTTKY 60V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

QUAD OPERATIONAL AMPLIFIER?

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QUAD OPERATIONAL AMPLIFIER?

文件：231.91 Kbytes Page：6 Pages