N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

Isc N-Channel MOSFET Transistor

文件：313.02 Kbytes Page：2 Pages

N-Channel 650V (D-S)Power MOSFET

文件：1.07167 Mbytes Page：9 Pages

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

N-Channel 650V (D-S) Power MOSFET

文件：1.07075 Mbytes Page：9 Pages

N-channel 600 V, 0.28 廓, 11 A MDmesh??II Power MOSFET in TO-220FP

文件：791.51 Kbytes Page：13 Pages

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

N-Channel 650V (D-S) Power MOSFET

文件：1.06718 Mbytes Page：9 Pages

Isc N-Channel MOSFET Transistor

文件：289.83 Kbytes Page：2 Pages