型号 功能描述 生产厂家 企业 LOGO 操作

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien

STMICROELECTRONICS

意法半导体

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件:674.18 Kbytes Page:12 Pages

STMICROELECTRONICS

意法半导体

更新时间:2026-2-17 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
25+
TO-220F(TO-220IS)
21000
原装正品现货,原厂订货,可支持含税原型号开票。
ST(意法)
25+
TO-220F(TO-220IS)
21000
原装正品现货,原厂订货,可支持含税原型号开票。
ST
25+
TO220F
6000
全新原装现货、诚信经营!
ST
23+
TO220F
9800
正规渠道,只有原装!
ST
23+
TO220F
6996
只做原装正品现货
ST
21+
TO220F
22119
十年信誉,只做原装,有挂就有现货!
ST/意法
25+
TO22F
32000
ST/意法全新特价STF13N60M2即刻询购立享优惠#长期有货
STM
20+
2000
TO-220FP-3
ST
22+
30000
原装现货,可追溯原厂渠道
ST(意法)
24+
TO-220F(TO-220IS)
5090
只做原装现货假一罚十!价格最低!只卖原装现货

STF13N60M2,13N60M2,13N60芯片相关品牌

STF13N60M2,13N60M2,13N60数据表相关新闻