N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in TO-220FP package

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，TO-220FP封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

丝印代码：F11NM80；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar

isc N-Channel MOSFET Transistor

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丝印代码：110N10F7；N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages

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Low gate input resistance

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N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package

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N-Channel MOSFET uses advanced trench technology

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Gate charge minimized

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Extremely low gate charge

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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isc N-Channel Mosfet Transistor

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N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

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isc N-Channel MOSFET Transistor

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N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件：756.46 Kbytes Page：19 Pages

N-channel 800 V, 0.35 廓, 11 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

文件：949.78 Kbytes Page：17 Pages

N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET

文件：467.13 Kbytes Page：17 Pages