STF11N65M2价格
参考价格：￥5.2536
型号：STF11N65M2 品牌：STMicroelectronics 备注：这里有STF11N65M2多少钱，2026年最近7天走势，今日出价，今日竞价，STF11N65M2批发/采购报价，STF11N65M2行情走势销售排行榜，STF11N65M2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STF11N65M2 | N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，TO-220FP封装 This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected; | STMICROELECTRONICS 意法半导体 |   | |
STF11N65M2 | Extremely low gate charge 文件：741.12 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | | |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP narrow leads package This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.\n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected; | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge 文件：741.12 Kbytes Page：15 Pages | STMICROELECTRONICS 意法半导体 | |
STF11N65M2产品属性
- 类型
描述
- Package：
TO-220FP
- Grade：
Industrial
- VDSS(V)：
650
- RDS(on)_max(@ VGS=10V)(Ω)：
0.68
- Drain Current (Dc)_max(A)：
7
- PTOT_max(W)：
25
- Qg_typ(nC)：
12.5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-220F |
32360 |
ST/意法全新特价STF11N65M2即刻询购立享优惠#长期有货 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
16960 |
原装正品现货支持实单 |
|||
ST |
17+ |
TO-220F |
2140 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST/意法 |
22+ |
N/A |
5950 |
现货,原厂原装假一罚十! |
|||
ST |
25+ |
TO-220FP |
20000 |
原装，请咨询 |
|||
ST全系列 |
25+23+ |
TO-220F |
26307 |
绝对原装正品全新进口深圳现货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
STF11N65M2规格书下载地址
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