丝印代码：10NM60N；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

N沟道600 V、0.53 Ohm典型值、10 A MDmesh II功率MOSFET，TO-220FP封装

丝印代码：10NM60ND；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET

N-Channel 650V (D-S)Power MOSFET

文件：1.10791 Mbytes Page：10 Pages

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

丝印代码：10NM60N；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

N-Channel 6 50V (D-S) Power MOSFET

文件：2.15015 Mbytes Page：10 Pages

N-Channel 6 50V (D-S) Power MOSFET

文件：2.1502 Mbytes Page：10 Pages