isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道620 V、0.68 Ohm典型值、8.4 A SuperMESH3(TM) 功率MOSFET，TO-220FP封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitances \n• Improved diode reverse recovery characteristics \n• Zener-protected;

N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?

文件：954.14 Kbytes Page：17 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET 620 V, 0.65 ?

文件：143.43 Kbytes Page：6 Pages

N-Channel Power MOSFET 620 V, 0.65 ?

文件：143.43 Kbytes Page：6 Pages

N-Channel Power MOSFET 620 V, 0.65 ?

文件：143.43 Kbytes Page：6 Pages

N-Channel Power MOSFET 620 V, 0.65 ?

文件：143.43 Kbytes Page：6 Pages