| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PJD8N10 | 100V N-Channel MOSFET 文件：403.26 Kbytes Page：8 Pages | PANJIT 強茂 |   | |
PJD8N10 | 中压MOSFET (60 - 200V , RDS(ON) < 1Ω) | PANJIT 強茂 | | |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPEARTING TEMPERATURE ■ APPLICATION | STMICROELECTRONICS 意法半导体 | | ||
8 Amps,100 Volts N-CHANNEL Power MOSFET 文件：511.29 Kbytes Page：7 Pages | CHONGQING 平伟实业 | | ||
N-Ch Enhancement Mode Power MOSFET 文件：460.72 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
Rad-Hard N-channel 100 V, 6 A Power MOSFET 文件：501.26 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | |
PJD8N10产品属性
- 类型
描述
- Polarity：
N
- Config.：
Single
- VDS[V]：
100
- VGS[±V]：
20
- ID[A]：
8
- RDS(on) Max. (mΩ)[10V]：
258
- RDS(on) Max. (mΩ)[4.5V]：
268
- Ciss Typ.[pF]：
378
- VGS(th) Max.[V]：
3.5
- Qg Typ. (nC)[10V]：
6.7
- Package：
TO-252AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT/强茂 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
PANJIT/强茂 |
25+ |
TO-252 |
20300 |
PANJIT/强茂原装特价PJD8N10即刻询购立享优惠#长期有货 |
|||
PANJIT |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
PJD8N10规格书下载地址
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PJD8N10数据表相关新闻
PJ-040-SMT-TR
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
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