抗辐照N沟道100V - 6A MOSFET

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.\n\n This Power MOSFET is fully ESCC qualified. • Fast switching \n• 100% avalanche tested \n• Hermetic package \n• 50 krad TID \n• SEE radiation hardened;

Rad-Hard N-channel 100 V, 6 A Power MOSFET

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N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPEARTING TEMPERATURE ■ APPLICATION

8 Amps,100 Volts N-CHANNEL Power MOSFET

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100V N-Channel MOSFET

文件：403.26 Kbytes Page：8 Pages

N-Ch Enhancement Mode Power MOSFET

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