Ultra-low gate charge

文件：817.93 Kbytes Page：16 Pages

N沟道900 V、0.72 Ohm典型值、7 A MDmesh K5功率MOSFET，DPAK封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) -RDS(on) = 0.81Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220FP package

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N-channel 900 V, 0.72 廓 typ., 7 A MDmesh??K5 Power MOSFET in a TO-220 package

文件：729.64 Kbytes Page：13 Pages

Zener-protected

文件：736.92 Kbytes Page：12 Pages