N沟道620 V、0.95 Ohm、5.5 A SuperMESH3(TM) 功率MOSFET，DPAK封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

Very low intrinsic capacitance

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N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET

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Very low intrinsic capacitance

文件：1.06712 Mbytes Page：19 Pages

N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages

文件：1.05244 Mbytes Page：19 Pages

N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages

文件：1.05244 Mbytes Page：19 Pages

N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3??Power MOSFET in TO-220FP, I짼PAKFP, I짼PAK, TO-220, IPAK packages

文件：1.05244 Mbytes Page：19 Pages