N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 Ω @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

N沟道200 V、0.65 Ohm、5 A STripFET(TM) 功率MOSFET，DPAK封装

The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. • TYPICAL RDS(on) = 0.65Ω @ 5V \n• LOW INPUT CAPACIATNCE \n• CONDUCTION LOSSES REDUCED \n• LOW THRESHOLD DEVICE;

N-CHANNEL 200V - 0.65廓 - 5A DPAK STripFET??MOSFET

DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. General Features ■ TYPICAL RDS(on) = 0.65 Ω @ 5V ■ CONDUCTION LOSSES REDUCED ■ LOW INPUT CAPACIA

丝印代码：TPM2007NK3；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

N-Channel 200 V (D-S) MOSFET

文件：1.64678 Mbytes Page：10 Pages

N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED C

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies