PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use i

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor

N-Channel Enhancement Mode Power MOSFET

Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l DC Motor Control and Class D Amplifier l Uninterruptible Power Supply (UPS) l Automotive

N-Channel 200 V (D-S) MOSFET

文件：2.60721 Mbytes Page：10 Pages

Dual N-Channel 25-V (D-S) MOSFET

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N-CHANNEL MOSFET in a TO-252 Plastic Package

文件：1.95544 Mbytes Page：11 Pages