STD4NK60Z价格
参考价格：￥1.4134
型号：STD4NK60ZT4 品牌：STMicroelectronics 备注：这里有STD4NK60Z多少钱，2026年最近7天走势，今日出价，今日竞价，STD4NK60Z批发/采购报价，STD4NK60Z行情走势销售排行榜，STD4NK60Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD4NK60Z | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to | STMICROELECTRONICS 意法半导体 |   | |
STD4NK60Z | N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | |
STD4NK60Z | N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | |
N沟道600 V、1.7 Ohm典型值、4 A SuperMESH功率MOSFET，IPAK封装 • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected; | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：D4NK60Z；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：D4NK60Z；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：DPAK；isc N-Channel MOSFET Transistor • FEATURES • Drain Source Voltage- : VDSS= 600V(Min) • Static drain-source on-resistance : RDS(on) ≤ 2Ω@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N沟道600 V、1.7 Ohm典型值、4 A SuperMESH功率MOSFET，DPAK封装 • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected; | STMICROELECTRONICS 意法半导体 | | ||
Power MOSFET 文件：1.07815 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to | STMICROELECTRONICS 意法半导体 | |
STD4NK60Z产品属性
- 类型
描述
- Package：
IPAK
- Grade：
Industrial
- VDSS(V)：
600
- RDS(on)_max(@ VGS=10V)(Ω)：
2
- Drain Current (Dc)_max(A)：
4
- PTOT_max(W)：
70
- Qg_typ(nC)：
18.8
- Reverse Recovery Time_typ(ns)：
400
- Peak Reverse Current_nom(A)：
8.5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
DPAK |
11580 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
三肯 |
14+ |
TO-3P-5L |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
23+ |
TO252 |
6996 |
只做原装正品现货 |
|||
ST |
12+ |
TO-252 |
10000 |
只做原装正品 |
|||
ST/意法 |
25+ |
TO-252 |
32360 |
ST/意法全新特价STD4NK60ZT4即刻询购立享优惠#长期有货 |
|||
ST/意法 |
20+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252 |
|||
ST(意法) |
25+ |
DPAK |
11580 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST/意法 |
21+ |
TO-252 |
20000 |
只做原装,质量保证 |
|||
ST |
24+ |
QR |
9800 |
一级代理/全新原装现货/长期供应! |
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DdatasheetPDF页码索引
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