STP4NK60Z价格

参考价格:¥1.7163

型号:STP4NK60Z 品牌:STMICROELECTRONICS 备注:这里有STP4NK60Z多少钱,2024年最近7天走势,今日出价,今日竞价,STP4NK60Z批发/采购报价,STP4NK60Z行情走势销售排行榜,STP4NK60Z报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STP4NK60Z

N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAKZener-ProtectedSuperMESH?줡owerMOSFET

Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP4NK60Z

N-channel600V-1.76廓-4ASuperMESH??PowerMOSFETDPAK-D2PAK-IPAK-I2PAK-TO-220-TO-220FP

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP4NK60Z

N-channel600V,1.76廓,4ASuperMESH??PowerMOSFETinDPAK,D2PAK,IPAK,I2PAK,TO-220,TO-220FP

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP4NK60Z

N-Channel650V(D-S)MOSFET

文件:1.09032 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channel600V-1.76廓-4ASuperMESH??PowerMOSFETDPAK-D2PAK-IPAK-I2PAK-TO-220-TO-220FP

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V,1.76廓,4ASuperMESH??PowerMOSFETinDPAK,D2PAK,IPAK,I2PAK,TO-220,TO-220FP

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAKZener-ProtectedSuperMESH?줡owerMOSFET

Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscN-ChannelMOSFETTransistor

文件:314.27 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:1.06969 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channel600V,1.76廓,4ASuperMESH??PowerMOSFETinDPAK,D2PAK,IPAK,I2PAK,TO-220,TO-220FP

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel600V,1.7Ωtyp.,4ASuperMESH™PowerMOSFETsinI2PAK,D2PAK,IPAKandDPAKpackages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH™.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-Channel650V(D-S)MOSFET

文件:1.08658 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)MOSFET

文件:1.08656 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

STP4NK60Z产品属性

  • 类型

    描述

  • 型号

    STP4NK60Z

  • 功能描述

    MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-24 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2017
TO-220FP
18950
全新原装现货,特价出售
ST/进口原
17+
TO-220
6200
ST
22+23+
TO-220
15766
绝对原装正品全新进口深圳现货
STM
21+
TO-220FP
20000
全新原装公司现货
ST/意法
23+
TO-220
33500
全新进口原装现货,假一罚十
ST
21+
TO-220
550
ST
23+
TO-220
10000
专做原装正品,假一罚百!
ST
2305+
原厂封装
15000
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
ST
24+
TO-220FP-3
10793
只做原装/假一赔十/安心咨询
ST/意法
14+18+11+
TO-220F
929
只做原装正品

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