N沟道600 V、1.6 Ohm、3.3 A MDmesh(TM) II功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

Power MOSFET

文件：1.07813 Mbytes Page：9 Pages

丝印代码：DPAK；Isc N-Channel MOSFET Transistor

文件：305.36 Kbytes Page：2 Pages

N-channel 600 V, 1.6 廓, 3.3 A, MDmesh??II Power MOSFET in DPAK package

文件：909.05 Kbytes Page：15 Pages

N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

丝印代码：D3NM60；N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

文件：711.43 Kbytes Page：17 Pages

Power MOSFET

文件：1.07623 Mbytes Page：9 Pages