N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

丝印代码：D3NK60Z；N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

N沟道600 V、3.2 Ohm典型值、2.4 A SuperMESH功率MOSFET，DPAK封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

Power MOSFET

文件：1.07822 Mbytes Page：9 Pages

丝印代码：IPAK；isc N-Channel MOSFET Transistor

文件：321.04 Kbytes Page：2 Pages

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

N-Channel 650 V (D-S) MOSFET

文件：1.10289 Mbytes Page：9 Pages