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STD35NF06L价格
参考价格：￥2.0698
型号：STD35NF06LT4 品牌：STMicroelectronics 备注：这里有STD35NF06L多少钱，2025年最近7天走势，今日出价，今日竞价，STD35NF06L批发/采购报价，STD35NF06L行情走势销售排行榜，STD35NF06L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD35NF06L | N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te | STMICROELECTRONICS 意法半导体 |   | |
STD35NF06L | 60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn | UMW 友台半导体 | | |
STD35NF06L | 60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec | EVVOSEMI 翊欧 | | |
STD35NF06L | N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，DPAK封装 | STMICROELECTRONICS 意法半导体 | | |
60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec | EVVOSEMI 翊欧 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn | UMW 友台半导体 | | ||
N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：887.28 Kbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：989.71 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters | STMICROELECTRONICS 意法半导体 | |
STD35NF06L产品属性
- 类型
描述
- 型号
STD35NF06L
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
25+ |
TO-252-3 |
4650 |
绝对原装公司现货 |
|||
ST专家 |
25+23+ |
DPAK |
29233 |
绝对原装正品全新进口深圳现货 |
|||
ST |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
ST/意法 |
25+ |
TO-252 |
40265 |
ST/意法全新特价STD35NF06LT4即刻询购立享优惠#长期有货 |
|||
ST/意法 |
2025+ |
TO-252-3(DPAK) |
2500 |
原装进口价格优 请找坤融电子! |
|||
23+ |
TO-251PBF |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ST(意法) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
ST(意法半导体) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ST |
17+ |
TO-252 |
6200 |
||||
ST |
24+ |
TO252DPAK |
8866 |
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STD35NF06L数据表相关新闻
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