STD35NF06价格

参考价格:¥2.0698

型号:STD35NF06LT4 品牌:STMicroelectronics 备注:这里有STD35NF06多少钱,2025年最近7天走势,今日出价,今日竞价,STD35NF06批发/采购报价,STD35NF06行情走势销售排行榜,STD35NF06报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STD35NF06

N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

STD35NF06

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn

UMW

友台半导体

STD35NF06

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

EVVOSEMI

翊欧

STD35NF06

N沟道60V - 0.018Ohm - 35A - DPAK StripFET(TM) II功率MOSFET

STMICROELECTRONICS

意法半导体

STD35NF06

N-Channel MOSFET uses advanced trench technology

文件:887.28 Kbytes Page:4 Pages

DOINGTER

杜因特

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

EVVOSEMI

翊欧

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn

UMW

友台半导体

N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET,DPAK封装

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:989.71 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 6 0-V (D-S) MOSFET

文件:897.22 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

STMICROELECTRONICS

意法半导体

STD35NF06产品属性

  • 类型

    描述

  • 型号

    STD35NF06

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-channel 60V - 0.018ヘ - 35A - DPAK STripFET⑩ II Power MOSFET

更新时间:2025-12-27 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-252
2035
ST
24+
TO-252
90000
一级代理商进口原装现货、假一罚十价格合理
ST(意法半导体)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
ST
TO-252
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ST/意法
2025+
TO-252-3(DPAK)
2500
原装进口价格优 请找坤融电子!
VBsemi(微碧)
24+
N/A
28630
原装正品现货支持实单
ST
23+
TO252
6996
只做原装正品现货
ST(意法)
25+
5000
只做原装 假一罚百 可开票 可售样

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