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STD35NF06价格
参考价格：￥2.0698
型号：STD35NF06LT4 品牌：STMicroelectronics 备注：这里有STD35NF06多少钱，2025年最近7天走势，今日出价，今日竞价，STD35NF06批发/采购报价，STD35NF06行情走势销售排行榜，STD35NF06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD35NF06 | N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 |   | |
STD35NF06 | 60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn | UMW 友台半导体 | | |
STD35NF06 | 60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec | EVVOSEMI 翊欧 | | |
STD35NF06 | N沟道60V - 0.018Ohm - 35A - DPAK StripFET(TM) II功率MOSFET | STMICROELECTRONICS 意法半导体 | | |
STD35NF06 | N-Channel MOSFET uses advanced trench technology 文件：887.28 Kbytes Page：4 Pages | DOINGTER 杜因特 | | |
N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te | STMICROELECTRONICS 意法半导体 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec | EVVOSEMI 翊欧 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn | UMW 友台半导体 | | ||
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te | STMICROELECTRONICS 意法半导体 | | ||
N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | | ||
N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，DPAK封装 | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：989.71 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：897.22 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters | STMICROELECTRONICS 意法半导体 | |
STD35NF06产品属性
- 类型
描述
- 型号
STD35NF06
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-channel 60V - 0.018ヘ - 35A - DPAK STripFET⑩ II Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
4170 |
原厂直销,现货供应,账期支持! |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
|||
ST |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
ST/意法 |
25+ |
TO-252 |
40266 |
ST/意法全新特价STD35NF06T4即刻询购立享优惠#长期有货 |
|||
ST |
NEW |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST/意法 |
25+ |
TO-252 |
54648 |
百分百原装现货 实单必成 |
|||
ST/意法 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法半导体 |
24+ |
TO-252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
19+ |
TO-252-3 |
244 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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