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MBRB20200CT价格
参考价格:¥2.0738
型号:MBRB20200CT 品牌:Diodes 备注:这里有MBRB20200CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB20200CT批发/采购报价,MBRB20200CT行情走势销售排行榜,MBRB20200CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MBRB20200CT | SWIRCHMODE?? Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k | Motorola 摩托罗拉 | ||
MBRB20200CT | SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | ||
MBRB20200CT | 20A Surface Mount High Power Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex | CITC 竹懋科技 | ||
MBRB20200CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBRB20200CT | Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFERFE international RFE国际公司RFE国际股份有限公司 | ||
MBRB20200CT | 20.0 Ampere Surface Mount Schottky Barrier Rectifiers 文件:376.82 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | ||
MBRB20200CT | Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A 文件:222.97 Kbytes Page:3 Pages | FS | ||
MBRB20200CT | Schottky Barrier Rectifier 文件:279.5 Kbytes Page:2 Pages | ISC 无锡固电 | ||
MBRB20200CT | 20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件:387.24 Kbytes Page:2 Pages | MCC 美微科 | ||
MBRB20200CT | 20 Amp High Voltage Power Schottky Barrier Rectifier 200Volts 文件:218.45 Kbytes Page:3 Pages | MCC 美微科 | ||
MBRB20200CT | Product Specification 文件:512.35 Kbytes Page:7 Pages | Good-Ark | ||
MBRB20200CT | 20A SCHOTTKY BARRIER RECTIFIER 文件:606.3 Kbytes Page:6 Pages | DIODES 美台半导体 | ||
MBRB20200CT | Schottky Diode in a TO-263 Plastic Package 文件:751.65 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | ||
MBRB20200CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCHOTTKY DIODE 200V 20A TO-263 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRB20200CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 200V 20A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | PAMDiodes Incorporated 龙鼎微龙鼎微电子(上海)有限公司 | ||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半导体 | |||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFERFE international RFE国际公司RFE国际股份有限公司 | |||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半导体 | |||
ThinkiSemi 20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers Features Low forward voltage drop ThinkiSemi matured ESD planar schottky High current capability High surge current capability Low reverse leakage current Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sou | THINKISEMI 思祁半导体 | |||
20 Amp High Voltage Power Schottky Barrier Rectifier 200Volts 文件:218.45 Kbytes Page:3 Pages | MCC 美微科 | |||
20A SCHOTTKY BARRIER RECTIFIER 文件:606.3 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件:249.6 Kbytes Page:3 Pages | MCC 美微科 | |||
20A SCHOTTKY BARRIER RECTIFIER 文件:606.3 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20.0 A Schottky Barrier Rectifier 文件:348.53 Kbytes Page:2 Pages | DGNJDZ 南晶电子 | |||
SCHOTTKY BARRIER RECTIFIER 文件:1.2203 Mbytes Page:4 Pages | JIANGSU 长电科技 | |||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件:1.05296 Mbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | |||
Fast Recovery Rectifier 文件:258.32 Kbytes Page:2 Pages | ISC 无锡固电 | |||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件:778.85 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件:50.48 Kbytes Page:3 Pages | BITECH 瑞谷拜特 | |||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件:50.48 Kbytes Page:3 Pages | BITECH 瑞谷拜特 |
MBRB20200CT产品属性
- 类型
描述
- 型号
MBRB20200CT
- 功能描述
肖特基二极管与整流器 20A 200
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
2410+ |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
||||
长电 |
25+23+ |
TO-263-2L |
23717 |
绝对原装正品全新进口深圳现货 |
|||
ON |
2025+ |
TO-263 |
32560 |
原装优势绝对有货 |
|||
24+ |
3000 |
公司现货 |
|||||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
DIODES/美台 |
23+ |
D2PAK |
6000 |
原装正品假一罚百!可开增票! |
|||
ON/安森美 |
2023+ |
TO263 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
扬杰 |
25+ |
TO-263 |
10000 |
扬杰原厂一级代理商,价格优势! |
|||
ON |
23+ |
D2PAK |
56000 |
||||
ON |
21+ |
TO-263 |
12588 |
原装正品 |
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MBRB20200CT规格书下载地址
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肖特基二极管与整流器 10A 45V
2019-8-6
DdatasheetPDF页码索引
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