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MBRB20200CT价格
参考价格:¥2.0738
型号:MBRB20200CT 品牌:Diodes 备注:这里有MBRB20200CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB20200CT批发/采购报价,MBRB20200CT行情走势销售排行榜,MBRB20200CT报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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MBRB20200CT | SWIRCHMODE?? Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k | Motorola 摩托罗拉 | ||
MBRB20200CT | SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | ||
MBRB20200CT | 20A Surface Mount High Power Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex | CITC 竹懋科技 | ||
MBRB20200CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBRB20200CT | Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | ||
MBRB20200CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 200V 20A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBRB20200CT | 肖特基二极管 | MCC | ||
MBRB20200CT | 肖特基二极管 | JSCJ 长晶科技 | ||
MBRB20200CT | 肖特基势垒整流器,200 V,20 A | ONSEMI 安森美半导体 | ||
MBRB20200CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCHOTTKY DIODE 200V 20A TO-263 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRB20200CT | 20.0 Ampere Surface Mount Schottky Barrier Rectifiers 文件:376.82 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | ||
MBRB20200CT | Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A 文件:222.97 Kbytes Page:3 Pages | FS | ||
MBRB20200CT | Schottky Barrier Rectifier 文件:279.5 Kbytes Page:2 Pages | ISC 无锡固电 | ||
MBRB20200CT | 20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件:387.24 Kbytes Page:2 Pages | MCC | ||
MBRB20200CT | 20 Amp High Voltage Power Schottky Barrier Rectifier 200Volts 文件:218.45 Kbytes Page:3 Pages | MCC | ||
MBRB20200CT | Product Specification 文件:512.35 Kbytes Page:7 Pages | Good-Ark 固锝电子 | ||
MBRB20200CT | 20A SCHOTTKY BARRIER RECTIFIER 文件:606.3 Kbytes Page:6 Pages | DIODES 美台半导体 | ||
MBRB20200CT | Schottky Diode in a TO-263 Plastic Package 文件:751.65 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | ||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半导体 | |||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | |||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半导体 | |||
ThinkiSemi 20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers Features Low forward voltage drop ThinkiSemi matured ESD planar schottky High current capability High surge current capability Low reverse leakage current Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sou | THINKISEMI 思祁半导体 | |||
20 Amp High Voltage Power Schottky Barrier Rectifier 200Volts 文件:218.45 Kbytes Page:3 Pages | MCC | |||
20A SCHOTTKY BARRIER RECTIFIER 文件:606.3 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件:249.6 Kbytes Page:3 Pages | MCC | |||
20A SCHOTTKY BARRIER RECTIFIER 文件:606.3 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
20.0 A Schottky Barrier Rectifier 文件:348.53 Kbytes Page:2 Pages | DGNJDZ 南晶电子 | |||
SCHOTTKY BARRIER RECTIFIER 文件:1.2203 Mbytes Page:4 Pages | JIANGSU 长电科技 | |||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件:1.05296 Mbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | |||
Fast Recovery Rectifier 文件:258.32 Kbytes Page:2 Pages | ISC 无锡固电 | |||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件:778.85 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件:50.48 Kbytes Page:3 Pages | BITECH | |||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件:50.48 Kbytes Page:3 Pages | BITECH |
MBRB20200CT产品属性
- 类型
描述
- 型号
MBRB20200CT
- 功能描述
肖特基二极管与整流器 20A 200
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
7928 |
全新原装正品/价格优惠/质量保障 |
|||
ON/安森美 |
24+ |
NA/ |
3525 |
原装现货,当天可交货,原型号开票 |
|||
ONSEMI/安森美 |
25+ |
D2PAK-3 |
90000 |
ONSEMI/安森美全新特价MBRB20200CTT4G即刻询购立享优惠#长期有货 |
|||
ON |
17+ |
TO263 |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
19+ |
TO-263 |
10000 |
正规渠道原装正品 |
|||
ON/IR |
23+ |
TO-263 |
6893 |
||||
ON/安森美 |
24+ |
TO-263 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
MBRB20200CT芯片相关品牌
MBRB20200CT规格书下载地址
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MBRB20200CT数据表相关新闻
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肖特基二极管与整流器 10A 45V
2019-8-6
DdatasheetPDF页码索引
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