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MBRF20200CT价格
参考价格:¥4.4421
型号:MBRF20200CTG 品牌:ONSemi 备注:这里有MBRF20200CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRF20200CT批发/采购报价,MBRF20200CT行情走势销售排行榜,MBRF20200CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBRF20200CT | SWITCHMODE??Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | Motorola 摩托罗拉 | ||
MBRF20200CT | SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=200V. • Fast Reverse Recovery Time : trr=35ns. | KECKEC CORPORATION KEC株式会社 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficie | DIOTECH | ||
MBRF20200CT | SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | ||
MBRF20200CT | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body | DACHANG 大昌电子 | ||
MBRF20200CT | 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Full Pack High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子(集团)有限公司 | ||
MBRF20200CT | Schottky Barrier Rectifiers Reverse Voltage: 150---200V Forward Current: 20A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop, low swithing losses ◇ High surge capacity ◇ For use in low voltage, high frequency inverters free wheeling, and polarity protecti | LUGUANG 鲁光电子 | ||
MBRF20200CT | 20A SCHOTTKY BARRIER DIODE
| FORMOSA 美丽微半导体 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | ||
MBRF20200CT | For General Purpose Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | Good-Ark | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIERS Reverse Voltage: 150---200V Forward Current: 20A FEATURES ▪ Metal-Semiconductor junction with guard ring ▪ Epitaxial construction ▪ Low forward voltage drop, low swithing losses ▪ High surge capacity ▪ For use in low voltage, high frequency inverters free wheeling, and polarity protecti | DSK | ||
MBRF20200CT | 20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | ||
MBRF20200CT | Schottky Diode in a TO-220F Plastic Package Descriptions Schottky Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. | FOSHAN 蓝箭电子 | ||
MBRF20200CT | 20A High Power Schottky Barrier Rectifiersnull ■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, | CITC 竹懋科技 | ||
MBRF20200CT | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | ||
MBRF20200CT | Dual Common-Cathode Ultra Low VF Schottky Rectifier Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC | BWTECH | ||
MBRF20200CT | SCHOTTKY BARRIER TYPE DIODE The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | ||
MBRF20200CT | Low forward voltage drop Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro | Littelfuse 力特 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current -20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forwa | CHENDA 辰达半导体 | ||
MBRF20200CT | TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | ||
MBRF20200CT | 20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers Features ✧ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ✧ Metal silicon junction, majority carrier conduction ✧ Low power loss, high efficiency ✧ High current capability, low forward voltage drop ✧ High surge capability ✧ For use in low voltage, high freque | THINKISEMI 思祁半导体 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBRF20200CT | MBRF20200CT (CTR) SCHOTTKY RECTIFIER Features 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre | SMCDIODE 桑德斯微电子 | ||
MBRF20200CT | Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A 文件:214.07 Kbytes Page:3 Pages | FS | ||
MBRF20200CT | SCHOTTKY BARRIER TYPE DIODE 文件:43.69 Kbytes Page:2 Pages | KECKEC CORPORATION KEC株式会社 | ||
MBRF20200CT | Schottky Barrier Rectifier 文件:124.26 Kbytes Page:2 Pages | DACHANG 大昌电子 | ||
MBRF20200CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 200V 10A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRF20200CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 200V ITO220 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
MBRF20200CT | Dual Common Cathode Schottky Rectifier 文件:231.87 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF20200CT | Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件:122.87 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF20200CT | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:183.36 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美台半导体 | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | |||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 | |||
SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla | COMCHIP 典琦 | |||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美台半导体 | |||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美台半导体 | |||
20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp | THINKISEMI 思祁半导体 | |||
SCHOTTKY BARRIER TYPE DIODE 文件:43.69 Kbytes Page:2 Pages | KECKEC CORPORATION KEC株式会社 | |||
Switch-mode Schottky Power Rectifier 文件:59.57 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
SCHOTTKY RECTIFIER 文件:134.72 Kbytes Page:4 Pages | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | |||
Low forward voltage drop 文件:622.27 Kbytes Page:3 Pages | Littelfuse 力特 | |||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | |||
Fast Recovery Rectifier 文件:258.32 Kbytes Page:2 Pages | ISC 无锡固电 | |||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件:778.85 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件:50.48 Kbytes Page:3 Pages | BITECH 瑞谷拜特 | |||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件:50.48 Kbytes Page:3 Pages | BITECH 瑞谷拜特 |
MBRF20200CT产品属性
- 类型
描述
- 型号
MBRF20200CT
- 功能描述
肖特基二极管与整流器 20 Amp 200 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SSG/MOSPEC |
25+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
台半/光宝 |
20+ |
TO220F-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ONSEMI |
24+ |
TO-220F |
39500 |
进口原装现货 支持实单价优 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
24+ |
TO-220-3 FullPak |
25000 |
ON全系列可订货 |
|||
ON |
24+/25+ |
600 |
原装正品现货库存价优 |
||||
Reasunos瑞森 |
1948+ |
ITO-220 |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
ON |
16+ |
TO-220F |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
TSC/台半 |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
MBRF20200CT规格书下载地址
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