MBRF20200CT价格
参考价格:¥4.4421
型号:MBRF20200CTG 品牌:ONSemi 备注:这里有MBRF20200CT多少钱,2026年最近7天走势,今日出价,今日竞价,MBRF20200CT批发/采购报价,MBRF20200CT行情走势销售排行榜,MBRF20200CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRF20200CT | 丝印代码:MBRF20200CT;20A High Power Schottky Barrier Rectifiersnull ■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, | CITC 竹懋科技 | ||
丝印代码:MBRF20200CT;SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla | COMCHIP 典琦 | |||
MBRF20200CT | Schottky Power Rectifier, Switch-mode, 20 A, 200 V The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, fre • Highly Stable Oxide Passivated Junction\n• Very Low Forward Voltage Drop\n• Matched Dual Die Construction\n• High Junction Temperature Capability\n• High dv/dt Capability\n• Guardring for Stress Protection\n• Epoxy Meets UL94, VO at 1/8\"\n• Electrically Isolated. No Isolation Hardware Required.\n; | ONSEMI 安森美半导体 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current -20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forwa | CHENDA 辰达半导体 | ||
MBRF20200CT | TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | ||
MBRF20200CT | 20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers Features ✧ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ✧ Metal silicon junction, majority carrier conduction ✧ Low power loss, high efficiency ✧ High current capability, low forward voltage drop ✧ High surge capability ✧ For use in low voltage, high freque | THINKISEMI 思祁半导体 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBRF20200CT | MBRF20200CT (CTR) SCHOTTKY RECTIFIER Features 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre | SMCDIODE 桑德斯微电子 | ||
MBRF20200CT | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • | SMC 桑德斯微电子 | ||
MBRF20200CT | For General Purpose Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | GOOD-ARK 固锝电子 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIERS Reverse Voltage: 150---200V Forward Current: 20A FEATURES ▪ Metal-Semiconductor junction with guard ring ▪ Epitaxial construction ▪ Low forward voltage drop, low swithing losses ▪ High surge capacity ▪ For use in low voltage, high frequency inverters free wheeling, and polarity protecti | DSK | ||
MBRF20200CT | 20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency | DYELEC 迪一电子 | ||
MBRF20200CT | Schottky Diode in a TO-220F Plastic Package Descriptions Schottky Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. | FOSHAN 蓝箭电子 | ||
MBRF20200CT | Dual Common-Cathode Ultra Low VF Schottky Rectifier Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC | BWTECH | ||
MBRF20200CT | SCHOTTKY BARRIER TYPE DIODE The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | ||
MBRF20200CT | Low forward voltage drop Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro | LITTELFUSE 力特 | ||
MBRF20200CT | SWITCHMODE??Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | MOTOROLA 摩托罗拉 | ||
MBRF20200CT | SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=200V. • Fast Reverse Recovery Time : trr=35ns. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficie | DIOTECH | ||
MBRF20200CT | SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | ||
MBRF20200CT | schottky-5a-and-above 20A SCHOTTKY BARRIER RECTIFIER | DIODES 美台半导体 | ||
MBRF20200CT | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body | DACHANG 大昌电子 | ||
MBRF20200CT | 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Full Pack High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS | TAK_CHEONG 德昌电子 | ||
MBRF20200CT | Schottky Barrier Rectifiers Reverse Voltage: 150---200V Forward Current: 20A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop, low swithing losses ◇ High surge capacity ◇ For use in low voltage, high frequency inverters free wheeling, and polarity protecti | LUGUANG 鲁光电子 | ||
MBRF20200CT | 20A SCHOTTKY BARRIER DIODE
| FORMOSA 美丽微半导体 | ||
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | ||
MBRF20200CT | Dual Common Cathode Schottky Rectifier 文件:231.87 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF20200CT | Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件:122.87 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF20200CT | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:183.36 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF20200CT | SCHOTTKY BARRIER TYPE DIODE 文件:43.69 Kbytes Page:2 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
MBRF20200CT | Schottky Barrier Rectifier 文件:124.26 Kbytes Page:2 Pages | DACHANG 大昌电子 | ||
MBRF20200CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 200V 10A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | LITTELFUSE 力特 | ||
MBRF20200CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 200V ITO220 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
MBRF20200CT | Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A 文件:214.07 Kbytes Page:3 Pages | FS | ||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美台半导体 | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELEC 迪一电子 | |||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | |||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque | ONSEMI 安森美半导体 | |||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美台半导体 | |||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美台半导体 | |||
20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp | THINKISEMI 思祁半导体 | |||
肖特基二极管 | PUOLOP 迪浦 | |||
SCHOTTKY BARRIER TYPE DIODE 文件:43.69 Kbytes Page:2 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
Switch-mode Schottky Power Rectifier 文件:59.57 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
SCHOTTKY RECTIFIER 文件:134.72 Kbytes Page:4 Pages | SMC 桑德斯微电子 | |||
Low forward voltage drop 文件:622.27 Kbytes Page:3 Pages | LITTELFUSE 力特 | |||
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 20 Amp High Voltage 200Volts Barrier Rectifier PowerSchottky Features • High Junction Temperature Capability x Marking : type number • Low Leakage Current • Case Material: Molded Plastic. UL Flammability ClassificationRating94V-0and MSL Rating 1 • Lead Free Finish/RoHS Com | MCC | |||
SWITCHMODE??Power Dual Schottky Rectifier SWITCHMODE Power Dual Schottky Rectifier ...using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Sch | MOTOROLA 摩托罗拉 | |||
SWIRCHMODE?? Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k | MOTOROLA 摩托罗拉 | |||
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件:387.24 Kbytes Page:2 Pages | MCC |
MBRF20200CT产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- Configuration:
Common Cathode
- VRRM Min (V):
200
- VF Max (V):
1
- IRM Max (µA):
1000
- IO(rec) Max (A):
20
- IFSM Max (A):
150
- Package Type:
TO-220-3 FullPak
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
台半/光宝 |
20+ |
TO220F-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
GS |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
25+ |
TO-220F |
38000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ON |
TO-220F |
35500 |
一级代理 原装正品假一罚十 价格优势 实单带接受价 |
||||
TSC/台半 |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
LITEON/光宝 |
14+ |
TO-220F |
350 |
||||
ON |
1618+ |
TO-220F |
4300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LT |
25+ |
TO220 |
22 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON/安森美 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SSG |
25+23+ |
TO-220F |
27710 |
绝对原装正品全新进口深圳现货 |
MBRF20200CT规格书下载地址
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