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MBRF20200CT价格

参考价格:¥4.4421

型号:MBRF20200CTG 品牌:ONSemi 备注:这里有MBRF20200CT多少钱,2026年最近7天走势,今日出价,今日竞价,MBRF20200CT批发/采购报价,MBRF20200CT行情走势销售排行榜,MBRF20200CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRF20200CT

丝印代码:MBRF20200CT;20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

CITC

竹懋科技

丝印代码:MBRF20200CT;SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

COMCHIP

典琦

MBRF20200CT

Schottky Power Rectifier, Switch-mode, 20 A, 200 V

The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, fre • Highly Stable Oxide Passivated Junction\n• Very Low Forward Voltage Drop\n• Matched Dual Die Construction\n• High Junction Temperature Capability\n• High dv/dt Capability\n• Guardring for Stress Protection\n• Epoxy Meets UL94, VO at 1/8\"\n• Electrically Isolated. No Isolation Hardware Required.\n;

ONSEMI

安森美半导体

MBRF20200CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 150 to 200 Volts Forward Current -20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forwa

CHENDA

辰达半导体

MBRF20200CT

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

TGS

MBRF20200CT

20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers

Features ✧ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ✧ Metal silicon junction, majority carrier conduction ✧ Low power loss, high efficiency ✧ High current capability, low forward voltage drop ✧ High surge capability ✧ For use in low voltage, high freque

THINKISEMI

思祁半导体

MBRF20200CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

MBRF20200CT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBRF20200CT

MBRF20200CT (CTR) SCHOTTKY RECTIFIER

Features 175C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

MBRF20200CT

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •

SMC

桑德斯微电子

MBRF20200CT

For General Purpose

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in

GOOD-ARK

固锝电子

MBRF20200CT

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage: 150---200V Forward Current: 20A FEATURES ▪ Metal-Semiconductor junction with guard ring ▪ Epitaxial construction ▪ Low forward voltage drop, low swithing losses ▪ High surge capacity ▪ For use in low voltage, high frequency inverters free wheeling, and polarity protecti

DSK

MBRF20200CT

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency

DYELEC

迪一电子

MBRF20200CT

Schottky Diode in a TO-220F Plastic Package

Descriptions Schottky Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications.

FOSHAN

蓝箭电子

MBRF20200CT

Dual Common-Cathode Ultra Low VF Schottky Rectifier

Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC

BWTECH

MBRF20200CT

SCHOTTKY BARRIER TYPE DIODE

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

MBRF20200CT

Low forward voltage drop

Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro

LITTELFUSE

力特

MBRF20200CT

SWITCHMODE??Schottky Power Rectifirer

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

MOTOROLA

摩托罗拉

MBRF20200CT

SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=200V. • Fast Reverse Recovery Time : trr=35ns.

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MBRF20200CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 150 to 200 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficie

DIOTECH

MBRF20200CT

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

ONSEMI

安森美半导体

MBRF20200CT

schottky-5a-and-above

20A SCHOTTKY BARRIER RECTIFIER

DIODES

美台半导体

MBRF20200CT

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A

Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body

DACHANG

大昌电子

MBRF20200CT

20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier

Full Pack High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS

TAK_CHEONG

德昌电子

MBRF20200CT

Schottky Barrier Rectifiers

Reverse Voltage: 150---200V Forward Current: 20A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop, low swithing losses ◇ High surge capacity ◇ For use in low voltage, high frequency inverters free wheeling, and polarity protecti

LUGUANG

鲁光电子

MBRF20200CT

20A SCHOTTKY BARRIER DIODE

FORMOSA

美丽微半导体

MBRF20200CT

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

MBRF20200CT

Dual Common Cathode Schottky Rectifier

文件:231.87 Kbytes Page:4 Pages

TSC

台湾半导体

MBRF20200CT

Isolation 20.0 AMPS. Schottky Barrier Rectifiers

文件:122.87 Kbytes Page:2 Pages

TSC

台湾半导体

MBRF20200CT

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:183.36 Kbytes Page:2 Pages

TSC

台湾半导体

MBRF20200CT

SCHOTTKY BARRIER TYPE DIODE

文件:43.69 Kbytes Page:2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MBRF20200CT

Schottky Barrier Rectifier

文件:124.26 Kbytes Page:2 Pages

DACHANG

大昌电子

MBRF20200CT

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 200V 10A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

LITTELFUSE

力特

MBRF20200CT

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 200V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

MBRF20200CT

Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A

文件:214.07 Kbytes Page:3 Pages

FS

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

DIODES

美台半导体

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

DYELEC

迪一电子

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−freque

ONSEMI

安森美半导体

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

DIODES

美台半导体

20A SCHOTTKY BARRIER RECTIFIER

Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for

DIODES

美台半导体

20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

THINKISEMI

思祁半导体

肖特基二极管

PUOLOP

迪浦

SCHOTTKY BARRIER TYPE DIODE

文件:43.69 Kbytes Page:2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Switch-mode Schottky Power Rectifier

文件:59.57 Kbytes Page:4 Pages

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

文件:134.72 Kbytes Page:4 Pages

SMC

桑德斯微电子

Low forward voltage drop

文件:622.27 Kbytes Page:3 Pages

LITTELFUSE

力特

20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky

20 Amp High Voltage 200Volts Barrier Rectifier PowerSchottky Features • High Junction Temperature Capability x Marking : type number • Low Leakage Current • Case Material: Molded Plastic. UL Flammability ClassificationRating94V-0and MSL Rating 1 • Lead Free Finish/RoHS Com

MCC

SWITCHMODE??Power Dual Schottky Rectifier

SWITCHMODE Power Dual Schottky Rectifier ...using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Sch

MOTOROLA

摩托罗拉

SWIRCHMODE?? Power Dual Schottky Rectifier

. . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k

MOTOROLA

摩托罗拉

20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky

文件:387.24 Kbytes Page:2 Pages

MCC

MBRF20200CT产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    200

  • VF Max (V):

    1

  • IRM Max (µA):

    1000

  • IO(rec) Max (A):

    20

  • IFSM Max (A):

    150

  • Package Type:

    TO-220-3 FullPak

更新时间:2026-5-15 18:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
台半/光宝
20+
TO220F-3
38560
原装优势主营型号-可开原型号增税票
GS
23+
TO-220F
10000
专做原装正品,假一罚百!
ON/安森美
25+
TO-220F
38000
全新原装现货特价销售,欢迎来电查询
ON
TO-220F
35500
一级代理 原装正品假一罚十 价格优势 实单带接受价
TSC/台半
21+
TO220
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
LITEON/光宝
14+
TO-220F
350
ON
1618+
TO-220F
4300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
LT
25+
TO220
22
百分百原装正品 真实公司现货库存 本公司只做原装 可
ON/安森美
2450+
TO-220F
9850
只做原装正品现货或订货假一赔十!
SSG
25+23+
TO-220F
27710
绝对原装正品全新进口深圳现货

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