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STD18价格
参考价格：￥2.1369
型号：STD1802T4 品牌：ST Microelectronics 备注：这里有STD18多少钱，2025年最近7天走势，今日出价，今日竞价，STD18批发/采购报价，STD18行情走势销售排行榜，STD18报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD18 | Thyristor-Diode Modules, Diode-Thyristor Modules 文件：480.11 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 |   | |
STD18 | Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.84346 Mbytes Page：4 Pages | SIRECT 矽莱克半导体 | | |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa | STMICROELECTRONICS 意法半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) • DC Current Gain -hFE = 100(Min)@ IC= 3A • Fast -Switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • CCFL dirvers • Volt | ISC 无锡固电 | | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa | STMICROELECTRONICS 意法半导体 | | ||
Low voltage fast-switching NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Very low collector to emitter satur | STMICROELECTRONICS 意法半导体 | | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS | STMICROELECTRONICS 意法半导体 | | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS | STMICROELECTRONICS 意法半导体 | | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS | STMICROELECTRONICS 意法半导体 | | ||
P-Channel E nhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package. | Samhop 三合微科 | | ||
P-Channel E nhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package. | Samhop 三合微科 | | ||
NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277 | AUK | | ||
NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277 | KODENSHI 可天士 | | ||
NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L | AUK | | ||
NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L | KODENSHI 可天士 | | ||
Power MOSFET MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical | ONSEMI 安森美半导体 | | ||
N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220 Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of | STMICROELECTRONICS 意法半导体 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • Higher VDSS rating • Excellent switching performance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring hi | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 30 V, 38 mΩ typ., 17 A STripFET II Power MOSFET in a DPAK package Features AEC-Q101 qualified Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capa | STMICROELECTRONICS 意法半导体 | | ||
Low voltage fast-switching NPN power transistor 文件：248.9 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low voltage fast-switching NPN power transistor 文件：248.9 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low voltage fast-switching NPN power transistor 文件：248.9 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS NPN 60V 5A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package | STMICROELECTRONICS 意法半导体 | | ||
N-channel 40 V, 2.5 m廓 typ., 80 A STripFET??F6 Power MOSFET in a DPAK package 文件：775.21 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：484.58 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：484.58 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：368.46 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：484.58 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：368.46 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：484.58 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：368.46 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：484.58 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：368.46 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：484.58 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：368.46 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：368.46 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules 文件：995.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
P-Channel 60 V (D-S) MOSFET 文件：998.13 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：480.11 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.84346 Mbytes Page：4 Pages | SIRECT 矽莱克半导体 | | ||
Thyristor-Diode Modules 文件：266.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：480.11 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.84346 Mbytes Page：4 Pages | SIRECT 矽莱克半导体 | | ||
Thyristor-Diode Modules 文件：266.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：480.11 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | | ||
Thyristor-Diode Modules, Diode-Thyristor Modules 文件：1.84346 Mbytes Page：4 Pages | SIRECT 矽莱克半导体 | | ||
Thyristor-Diode Modules 文件：266.59 Kbytes Page：4 Pages | SIRECTIFIER 矽莱克电子 | |
STD18产品属性
- 类型
描述
- 型号
STD18
- 制造商
SIRECTIFIER
- 制造商全称
Sirectifier Semiconductors
- 功能描述
Thyristor-Diode Modules, Diode-Thyristor Modules
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价STD18NF03L即刻询购立享优惠#长期有货 |
|||
ST |
24+ |
TO252 |
90000 |
原装现货实单必成 |
|||
ST/意法 |
21+ |
TO-252-3 |
6290 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
25+ |
TO252 |
18000 |
原厂直接发货进口原装 |
|||
ST/意法半导体 |
25+ |
TO-252-3 |
4650 |
绝对原装公司现货 |
|||
STMicroelectronics Asia Pacifi |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
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STD18规格书下载地址
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