N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N沟道600 V、230 mOhm典型值、13 A MDmesh M6功率MOSFET，DPAK封装

N-channel 600 V, 230 mΩ typ., 13 A, MDmesh M6 Power MOSFET in a D²PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorporate

N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

N-channel 600 V, 255 m typ., 9 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of