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STD13NM60N价格
参考价格：￥4.3411
型号：STD13NM60N 品牌：STMicroelectronics 备注：这里有STD13NM60N多少钱，2025年最近7天走势，今日出价，今日竞价，STD13NM60N批发/采购报价，STD13NM60N行情走势销售排行榜，STD13NM60N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STD13NM60N | Low gate input resistance Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab | STMICROELECTRONICS 意法半导体 |   | |
STD13NM60N | N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab | STMICROELECTRONICS 意法半导体 | | |
STD13NM60N | Isc N-Channel MOSFET Transistor 文件：300.57 Kbytes Page：2 Pages | ISC 无锡固电 | | |
N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel Mosfet Transistor 文件：323.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl | STMICROELECTRONICS 意法半导体 | | ||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.06718 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Isc N-Channel MOSFET Transistor 文件：289.83 Kbytes Page：2 Pages | ISC 无锡固电 | |
STD13NM60N产品属性
- 类型
描述
- 型号
STD13NM60N
- 功能描述
MOSFET N-Ch 600 Volt 11 Amp Power MDmesh
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO-252 |
504550 |
免费送样原盒原包现货一手渠道联系 |
|||
ST/意法 |
24+ |
TO252 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
ST/意法 |
25+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
24+ |
TO-252-2(DPAK) |
16048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST原装 |
25+23+ |
TO-251 |
23217 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
22+ |
TO-252 |
9000 |
原装正品,支持实单! |
|||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
|||
ST |
24+ |
TO-252-3 |
8750 |
只做原装/假一赔十/安心咨询 |
|||
ST |
24+ |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ST(意法半导体) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
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STD13NM60N数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V， + 20 V Vgs th - 門源門限電壓 : 4.5 V
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