NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA） APPLICATIONS ● NPN Silicon Epitaxial Planar Tr

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

Small Signal Transistors

NPN Silicon Transistor

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NPN Silicon Transistor

Features • High β & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter.

NPN Silicon Transistor

Features • High β & low saturation transistor. • hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter.

NPN Silicon Transistor

Features • High β & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter.

NPN Silicon Transistor

Features • High β & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter.

Epitaxial planar NPN silicon transistor

Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1mA

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

TRANSISTOR(NPN)

FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

文件：261.92 Kbytes Page：4 Pages

NPN Silicon Transistor

文件：262.91 Kbytes Page：4 Pages

Small Signal Transistors

Epitaxial planar NPN silicon transistor

NPN Silicon Transistor

文件：252.33 Kbytes Page：4 Pages

NPN Silicon Transistor

文件：251.14 Kbytes Page：4 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

M.2 Socket, H2.1 A Key 0.5 Pitch G/F, Black, Reel

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

General Purpose Tweezers

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3.6V/400mAh

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