位置：首页 > IC中文资料第11568页 > STD123
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD123 | NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | AUK |   | |
STD123 | Silicon Epitaxial Planar Transistor FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA） APPLICATIONS ● NPN Silicon Epitaxial Planar Tr | BILIN 银河微电 | | |
STD123 | NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | KODENSHI 可天士 | | |
STD123 | NPN Silicon Transistor 文件：180.34 Kbytes Page：4 Pages | KODENSHI 可天士 | | |
STD123 | Small Signal Transistors | AUK | | |
NPN Silicon Transistor Features • High β & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. | AUK | | ||
NPN Silicon Transistor Features • High β & low saturation transistor. • hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. | KODENSHI 可天士 | | ||
NPN Silicon Transistor Features • High β & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. | KODENSHI 可天士 | | ||
NPN Silicon Transistor Features • High β & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. | AUK | | ||
Epitaxial planar NPN silicon transistor Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1mA | AUK | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | AUK | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | KODENSHI 可天士 | | ||
TRANSISTOR(NPN) FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | HTSEMI 金誉半导体 | | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | JIANGSU 长电科技 | | ||
丝印代码：123；SOT-23 Plastic-Encapsulate Transistors FEATURES Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | DGNJDZ 南晶电子 | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | KODENSHI 可天士 | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | AUK | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | AUK | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | KODENSHI 可天士 | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | AUK | | ||
NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) | KODENSHI 可天士 | | ||
NPN Silicon Transistor 文件：261.92 Kbytes Page：4 Pages | KODENSHI 可天士 | | ||
NPN Silicon Transistor 文件：262.91 Kbytes Page：4 Pages | KODENSHI 可天士 | | ||
Small Signal Transistors | AUK | | ||
Epitaxial planar NPN silicon transistor | AUK | | ||
NPN Silicon Transistor 文件：252.33 Kbytes Page：4 Pages | KODENSHI 可天士 | | ||
NPN Silicon Transistor 文件：251.14 Kbytes Page：4 Pages | KODENSHI 可天士 | | ||
Silicon NPN Transistor General Purpose Audio Amplifier, Switch Silicon NPN Transistor General Purpose Audio Amplifier, Switch | NTE | | ||
Dual Retriggerable Monostable Multivibrator 文件：198.33 Kbytes Page：6 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | |
STD123产品属性
- 类型
描述
- 型号
STD123
- 制造商
BILIN
- 制造商全称
Galaxy Semi-Conductor Holdings Limited
- 功能描述
Silicon Epitaxial Planar Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AUK |
2016+ |
SOT23 |
15000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
AUK |
2026+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
AUK |
24+ |
SOT23 |
990000 |
明嘉莱只做原装正品现货 |
|||
长电 |
25+23+ |
SOT-23 |
24132 |
绝对原装正品全新进口深圳现货 |
|||
CJ |
2450+ |
SOT23 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
KODENSHIA |
2025+ |
SOT-23F |
5000 |
原装进口,免费送样品! |
|||
24+ |
120000 |
本站现库存 |
|||||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
原装AUK |
19+ |
SOT-23 |
20000 |
||||
AUK |
2447 |
SOT-23 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
STD123规格书下载地址
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