型号 功能描述 生产厂家&企业 LOGO 操作
STD123

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK

AUK
STD123

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) APPLICATIONS ●NPNSiliconEpitaxialPlanarTr

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
STD123

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI
STD123

NPNSiliconTransistor

文件:180.34 Kbytes Page:4 Pages

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. •hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorin remotetransmitter.

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremotetransmitter.

AUK

AUK

AUK

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremote transmitter.

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremotetransmitter.

AUK

AUK

AUK

EpitaxialplanarNPNsilicontransistor

Description •Highcurrentapplication Features •Extremelylowcollectorsaturationvoltage:VCE(sat)=0.1V(Typ.)@IC=500mA,IB=50mA •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)@IB=1mA

AUK

AUK

AUK

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK

AUK

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

SOT-23Plastic-EncapsulateTransistors

FEATURES Lowsaturationmediumcurrentapplication Extremelylowcollectorsaturationvoltage Suitableforlowvoltagelargecurrentdrivers HighDCcurrentgainandlargecurrentcapability Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TRANSISTOR(NPN)

FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK

AUK

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK

AUK

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK

AUK

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

文件:261.92 Kbytes Page:4 Pages

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

文件:262.91 Kbytes Page:4 Pages

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

文件:252.33 Kbytes Page:4 Pages

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSiliconTransistor

文件:251.14 Kbytes Page:4 Pages

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

CustomerSpecificationS

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

M.2Socket,H2.1AKey0.5PitchG/F,Black,Reel

PerformanceandDescriptions: Theproductisdesignedtomeettheelectrical,mechanicalandenvironmentalperformancerequirementsspecification.Unlessotherwisespecified,alltestsareperformedatambientenvironmentalconditions.

ATTEND

ATTEND Technology Inc.

ATTEND

GeneralPurposeTweezers

文件:3.67611 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

3.6V/400mAh

文件:207.43 Kbytes Page:1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

STD123产品属性

  • 类型

    描述

  • 型号

    STD123

  • 制造商

    BILIN

  • 制造商全称

    Galaxy Semi-Conductor Holdings Limited

  • 功能描述

    Silicon Epitaxial Planar Transistor

更新时间:2024-5-22 15:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KODENSHIA
SOT323
7906200
长电
22+23+
SOT-23
24132
绝对原装正品全新进口深圳现货
AUK
1833+
SOT23
9000
原装现货!天天特价!随时可以货!
AUK
20+
SOT
35830
原装优势主营型号-可开原型号增税票
AUK
21+
SOT-23
35200
一级代理/放心采购
CJ/长晶
24+
SOT-23
30000
长晶全系列二三极管原装优势供应,欢迎询价
CJ/长晶
23+
SOT-23
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
AUK
SOT-323
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
AUK
2020+
SOT23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
AUK
23+
SOT23
15000
全新原装现货,价格优势

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