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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STD123 | NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | AUK AUK | ||
STD123 | SiliconEpitaxialPlanarTransistor FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) APPLICATIONS ●NPNSiliconEpitaxialPlanarTr | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
STD123 | NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | KODENSHIKodenshi Group 可天士可天士光电子集团 | ||
STD123 | NPNSiliconTransistor 文件:180.34 Kbytes Page:4 Pages | KODENSHIKodenshi Group 可天士可天士光电子集团 | ||
NPNSiliconTransistor Features •Highβ&lowsaturationtransistor. •hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorin remotetransmitter. | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremotetransmitter. | AUK AUK | |||
NPNSiliconTransistor Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremote transmitter. | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremotetransmitter. | AUK AUK | |||
EpitaxialplanarNPNsilicontransistor Description •Highcurrentapplication Features •Extremelylowcollectorsaturationvoltage:VCE(sat)=0.1V(Typ.)@IC=500mA,IB=50mA •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)@IB=1mA | AUK AUK | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | AUK AUK | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
SOT-23Plastic-EncapsulateTransistors FEATURES Lowsaturationmediumcurrentapplication Extremelylowcollectorsaturationvoltage Suitableforlowvoltagelargecurrentdrivers HighDCcurrentgainandlargecurrentcapability Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(NPN) FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | AUK AUK | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | AUK AUK | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | AUK AUK | |||
NPNSiliconTransistor Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA) | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor 文件:261.92 Kbytes Page:4 Pages | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor 文件:262.91 Kbytes Page:4 Pages | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor 文件:252.33 Kbytes Page:4 Pages | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSiliconTransistor 文件:251.14 Kbytes Page:4 Pages | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
CustomerSpecification Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled | ALPHAWIREAlpha Wire 阿尔法电线 | |||
CustomerSpecificationS Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled | ALPHAWIREAlpha Wire 阿尔法电线 | |||
M.2Socket,H2.1AKey0.5PitchG/F,Black,Reel PerformanceandDescriptions: Theproductisdesignedtomeettheelectrical,mechanicalandenvironmentalperformancerequirementsspecification.Unlessotherwisespecified,alltestsareperformedatambientenvironmentalconditions. | ATTEND ATTEND Technology Inc. | |||
GeneralPurposeTweezers 文件:3.67611 Mbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
3.6V/400mAh 文件:207.43 Kbytes Page:1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子(上海)有限公司 |
STD123产品属性
- 类型
描述
- 型号
STD123
- 制造商
BILIN
- 制造商全称
Galaxy Semi-Conductor Holdings Limited
- 功能描述
Silicon Epitaxial Planar Transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
KODENSHIA |
SOT323 |
7906200 |
|||||
长电 |
22+23+ |
SOT-23 |
24132 |
绝对原装正品全新进口深圳现货 |
|||
AUK |
1833+ |
SOT23 |
9000 |
原装现货!天天特价!随时可以货! |
|||
AUK |
20+ |
SOT |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
AUK |
21+ |
SOT-23 |
35200 |
一级代理/放心采购 |
|||
CJ/长晶 |
24+ |
SOT-23 |
30000 |
长晶全系列二三极管原装优势供应,欢迎询价 |
|||
CJ/长晶 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
AUK |
SOT-323 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
AUK |
2020+ |
SOT23 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
AUK |
23+ |
SOT23 |
15000 |
全新原装现货,价格优势 |
STD123规格书下载地址
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深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:STD120N4F6 类别分立半导体产品晶体管-FET,MOSFET-单个 制造商STMicroelectronics 包装:2500 封装:TO-252-3
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