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位置：首页 > IC中文资料第11568页 > STD123

型号 功能描述 生产厂家&企业 LOGO 操作
STD123

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK corp

AUK
STD123

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA） APPLICATIONS ●NPNSiliconEpitaxialPlanarTr

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
STD123

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123

NPNSiliconTransistor

文件：180.34 Kbytes Page：4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123AS

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. •hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorin remotetransmitter.

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123AS

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremotetransmitter.

AUK

AUK corp

AUK
STD123ASF

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremote transmitter.

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123ASF

NPNSiliconTransistor

Features •Highβ&lowsaturationtransistor. hFE=400Min.@VCE=1V,Ic=100mA •Suitableforlargecurrentdrivedirectly. •ApplicationforIREDDrivetransistorinremotetransmitter.

AUK

AUK corp

AUK
STD123N

EpitaxialplanarNPNsilicontransistor

Description •Highcurrentapplication Features •Extremelylowcollectorsaturationvoltage:VCE(sat)=0.1V(Typ.)@IC=500mA,IB=50mA •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)@IB=1mA

AUK

AUK corp

AUK
STD123S

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK corp

AUK
STD123S

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123S

SOT-23Plastic-EncapsulateTransistors

FEATURES Lowsaturationmediumcurrentapplication Extremelylowcollectorsaturationvoltage Suitableforlowvoltagelargecurrentdrivers HighDCcurrentgainandlargecurrentcapability Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
STD123S

TRANSISTOR(NPN)

FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
STD123S

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowsaturationmediumcurrentapplication ●Extremelylowcollectorsaturationvoltage ●Suitableforlowvoltagelargecurrentdrivers ●HighDCcurrentgainandlargecurrentcapability ●Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
STD123SF

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123SF

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK corp

AUK
STD123U

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK corp

AUK
STD123U

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123UF

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

AUK

AUK corp

AUK
STD123UF

NPNSiliconTransistor

Features •Lowsaturationmediumcurrentapplication •Extremelylowcollectorsaturationvoltage •Suitableforlowvoltagelargecurrentdrivers •HighDCcurrentgainandlargecurrentcapability •Lowonresistance:RON=0.6Ω(Max.)(IB=1mA)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123AS

NPNSiliconTransistor

文件：261.92 Kbytes Page：4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123ASF

NPNSiliconTransistor

文件：262.91 Kbytes Page：4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123S

NPNSiliconTransistor

文件：252.33 Kbytes Page：4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
STD123U

NPNSiliconTransistor

文件：251.14 Kbytes Page：4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
123

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE
123

CustomerSpecificationS

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE
123A

M.2Socket,H2.1AKey0.5PitchG/F,Black,Reel

PerformanceandDescriptions: Theproductisdesignedtomeettheelectrical,mechanicalandenvironmentalperformancerequirementsspecification.Unlessotherwisespecified,alltestsareperformedatambientenvironmentalconditions.

ATTENDATTEND Technology Inc.

立威科技立威科技股份有限公司

ATTEND
123.SA

GeneralPurposeTweezers

文件：3.67611 Mbytes Page：4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
123A

3.6V/400mAh

文件：207.43 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO

STD123产品属性

  • 类型

    描述

  • 型号

    STD123

  • 制造商

    BILIN

  • 制造商全称

    Galaxy Semi-Conductor Holdings Limited

  • 功能描述

    Silicon Epitaxial Planar Transistor

STD123供应商更多...

更新时间：2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
STD123UF
AUK
24+
NA/
4500
原厂直销,现货供应,账期支持!
询价
深圳市凌旭科技有限公司
STD123SJ
AUK
2016+
SOT23
15000
只做原装,假一罚十,公司可开17%增值税发票!
询价
中天科工半导体（深圳）有限公司
STD123S
AUK
20+
SOT
35830
原装优势主营型号-可开原型号增税票
询价
深圳市科芯源微电子有限公司
STD123SJ
AUK
25+
SOT23
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市明嘉莱科技有限公司
STD123SJ
AUK
24+
SOT23
990000
明嘉莱只做原装正品现货
询价
深圳市科恒伟业电子有限公司
STD123UF
AUK
1942+
SOT-323
9852
只做原装正品现货或订货!假一赔十!
询价
深圳诚思涵科技有限公司
STD123SF
原装AUK
19+
SOT-23
20000
询价
深圳市力拓辉电子有限公司
STD123S_>150_SOT-23
长晶科技
21+
50
全新原装鄙视假货
询价
深圳市凯睿晟科技有限公司
STD123S
CJ/长电
21+
SOT-23
30000
百域芯优势 实单必成 可开13点增值税发票
询价
深圳市振宏微科技有限公司
STD123S
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价

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