SiliconNPNTransistorGeneralPurposeAudioAmplifier,Switch

SiliconNPNTransistorGeneralPurposeAudioAmplifier,Switch

IntegratedCircuitFMMultiplexStereoDemodulator

Description: TheNTE1230isamonolithicintegratedcircuitina16–LeadDIPtypepackagedesignedforuseasanFMstereomultiplexdemodulator.Thisdeviceincludes2channelamplifiersthatcanmakethe0dBlineoutput.

IntegratedCircuitComplete4WattTVSoundChannel

Description: CapableofcarryingoutallofthefunctionsofaTVsoundchannel,theNTE1231andNTE1231Asiliconmonolithicintegratedcircuitsconsistofasix–stageIFamplifier/limiter,low–passfilter,differentialpeakdetector,DCvolumecontrol,regulatedpowersupply,audiopreamplifier,

IntegratedCircuitComplete4WattTVSoundChannel

Description: CapableofcarryingoutallofthefunctionsofaTVsoundchannel,theNTE1231andNTE1231Asiliconmonolithicintegratedcircuitsconsistofasix–stageIFamplifier/limiter,low–passfilter,differentialpeakdetector,DCvolumecontrol,regulatedpowersupply,audiopreamplifier,

IntegratedCircuitAudioAmplifierforCarRadio,8W

Description: TheNTE1232isaClassBaudioamplifierina5–LeadTO220typepackagedesignedfordrivinglowimpedanceloads(downto1.6Ω).Thisdeviceprovidesahighoutputcurrentcapability(upto3.5A),verylowharmonicandcross–overdistortion. Features: •LowNumberofExtern

IntegratedCircuitFrequencySynthesizer

Description: TheNTE1233consistsofacrystaloscillator,10bitdivider,phasecomparatorandaprogrammabledivided−by−N9bitcounterconstructedwithcomplementaryMOSdeviceinonechipmonolithicstructure.Thisdevicehasbeendesignedforuseinfrequencysynthesizersandphaselocked

IntegratedCircuitFMIFAmplifier

Description: TheNTE1234isdesignedforuseinFMIFandTVsoundIFampapplications.Thisdevicecontains3differentstagedifferentialIFampandadifferentialpeakdetectorfunction. Features: •ExcellentAMRejection:(AMR=50dbtyp.) •HighSensitivity:(VIN(lim)=50dBµVt

IntegratedCircuitSquelchAmp

IntegratedCircuitSquelchAmp

IntegratedCircuitTVSoundIFSystem

Description: TheNTE1236monolithicTV/FMsoundsystemconsistsofamultistagelimitingIFamplifier,DCgaincontrol,FMdetector,andanaudiodriverconstructedonasinglesiliconchip.Excellentsensitivity,highAMrejectionandaninternallyregulatedpowersupplycoupledwithlowexter

IntegratedCircuitAMRadiowithoutAudioStage

Features: •SmallExternalPartCount •TuningMeterCircuit •WideAGCRange

SiliconComplementaryTransistorsGeneralPurpose

Description: TheNTE123A(NPN)andNTE159M(PNP)arewidelyused“IndustryStandard”complementarytransistorsinaTO18typecasedesignedforapplicationssuchasmedium–speedswitchingandamplifiersfromaudiotoVHFfrequencies. Features: ●LowCollectorSaturationVoltage:1V(Max) ●Hig

SiliconNPNTransistorAudioAmplifier,Switch(CompltoNTE159)

SiliconNPNTransistorAudioAmplifier,Switch(CompltoNTE159)

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled

CustomerSpecificationS

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled

M.2Socket,H2.1AKey0.5PitchG/F,Black,Reel

PerformanceandDescriptions: Theproductisdesignedtomeettheelectrical,mechanicalandenvironmentalperformancerequirementsspecification.Unlessotherwisespecified,alltestsareperformedatambientenvironmentalconditions.

GeneralPurposeTweezers

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3.6V/400mAh

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