N-CHANNEL800V-1.8ohm-5A-D2PAKPowerMESH]MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

N-CHANNEL800V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES

N-CHANNEL800V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.0A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-CHANNEL800V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES