isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. ■ TYPICAL RDS(on)= 1.8Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES

N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. ■ TYPICAL RDS(on)= 1.8Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES

N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. ■ TYPICAL RDS(on)= 1.8Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES

N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a