N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-cha

N沟道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，D2PAK封装

N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

N-channel 600 V, 125 m typ., 21 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

N-channel 600 V, 115 m typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • High-creepage package Description This high-voltage N-channel Power MOSFET