N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a D²PAK package

Features Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technol

N沟道800 V、0.15 Ohm典型值、24 A MDmesh K5功率MOSFET，D2PAK封装

N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a TO-247 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog