N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh™Power MOSFET

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.215Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of