HF/VHF/UHF RF power N-channel MOSFETs

Description The STAC2942B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21

封装/外壳：STAC244F 包装：托盘 描述：TRANS RF PWR N-CH 350W STAC244B 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF/VHF/UHF RF power N-channel MOSFETs

Description The STAC2942B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21

封装/外壳：STAC244F 包装：散装 描述：TRANS RF PWR N-CH 350W STAC244B 分立半导体产品 晶体管 - FET，MOSFET - 射频

Real-Time Interrupt Controller

GENERAL DESCRIPTION DISTINCTIVE CHARACTERISTICS

A High-Performance 8-Bit Slice Microprogram Sequencer

GENERAL DESCRIPTION The Am29112 is a high performance interruptible microprogram sequencer intended for use in very high speed microprogrammed machines and optimized for the new state-of-the-art ALUs and other processing components. The Am29112 is designed to operate in 10 MHz microprogrammed sys

Eight-Bit AM29116 I/O Support

GENERAL DESCRIPTION The Am29112 is a high performance interruptible microprogram sequencer intended for use in very high speed microprogrammed machines and optimized for the new state-of-the-art ALUs and other processing components. The Am29112 is designed to operate in 10 MHz microprogrammed sys

HIGH VOLTAGE LOW DROPOUT REGULATOR

GENERAL DESCRIPTION The AMS2942 are micropower voltage regulators ideally suited for use with high voltage powered systems. This device feature very low quiescent current (typ.130µA), and very low dropout voltage (typ.45mV at light loads and 380mV at 100mA). The quiescent current increases only s

HIGH VOLTAGE LOW DROPOUT REGULATOR

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