4 x 13 W dual/quad power amplifier

Features ■ High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10 THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10 THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10 THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10 THD – 4x 13 W into 2 Ω at 15 V, 1 kHz, 10 THD – 4x 11 W into 4 Ω at 18 V, 1 kHz, 10 THD

Wideband/Video ?쏷??Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Wide Bandwidth: 500 MHZ • Low Crosstalk: - 85 dB • High Off-Isolation: - 80 dB at 5 MHz • T Switch Configuration • TTL and CMOS Logic Compatible • Fast Switching - tON: 45 ns • Low RDS(on): 30  • Compliant to RoHS Directiv

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Ultra Low Profile SMT Top Actuated

Features/Benefits • 3.7 x 3.7 mm footprint • 0.35 mm thickness • High number of cycles

Power MOSFET

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