NPN Darlington General purpose

External dimensions D • • • STA (10-pin) VCBO 120 V VCEO 100 V VEBO 6 V IC 4 A ICP 8 (PW≤10ms, Du≤50) A

拉电流驱动器（通用）阵列

硅 NPN 三重扩散型达林顿晶体管阵列（四合一）\n拉电流驱动器阵列。 ・内置 4 个 NPN 达林顿三极管。\n・直流电流放大倍数高;

NPN Darlington General purpose

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NPN Darlington General purpose

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封装/外壳：10-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS 4NPN DARL 100V 4A SIP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

NPN Darlington General purpose

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PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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