10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Description The ST160

HF至1.6 GHz的10W 28V RF功率LDMOS晶体管

The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages