10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Description The ST160

HF至1.6 GHz的10W 28V RF功率LDMOS晶体管

The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Large positive and negative gate-source voltage range for improved class C operation \n• In compliance with the european directive 2002/95/EC;

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

NPN SILICON POWER TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain

15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applicati

POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 50 ns Induct