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型号	功能描述	生产厂家企业	LOGO
SST29EE010A	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Mbit (128K x8) Page-Mode EEPROM PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Megabit (128K x 8) Page Mode EEPROM 文件：882.72 Kbytes Page：27 Pages	SST Silicon Storage Technology, Inc	SST
SST29EE010	1 Mbit (128K x8) Page-Write EEPROM 文件：458.14 Kbytes Page：30 Pages	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-120-4I-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-150-4I-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-U	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-UH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-W	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4C-WH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4I-E	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4I-EH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4I-N	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4I-NH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4I-P	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST
SST29EE010A-200-4I-PH	1 Megabit (128K x 8) Page Mode EEPROM PRODUCT DESCRIPTION The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with	SST Silicon Storage Technology, Inc	SST

SST29EE010A产品属性

类型
描述
型号
SST29EE010A
制造商
SST
制造商全称
Silicon Storage Technology, Inc
功能描述
1 Megabit(128K x 8) Page Mode EEPROM

SST29EE010A供应商更多...

更新时间：2026-1-27 17:38:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市浩翊科技有限公司	SST29EE020	SST	26+	PLCC32	12000	原装，正品	询价
深圳市能创芯电子科技有限公司	SST29EE020-120	SST	23+	DIP	3000	原装正品假一罚百!可开增票!	询价
深圳诚思涵科技有限公司	SST29EE020	SST	24+	PLCC	37888	只做原装公司现货库存	询价
深圳市英科美电子有限公司	SST29EE020	SST	2223+	PLCC32	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市科芯源微电子有限公司	SST29EE020	SST	2026+	PLCC	996880	只做原装,欢迎来电资询	询价
深圳市坤融电子科技有限公司	SST29EE010A-90-4I-EH	SST	2025+	TSSOP-32	5000	原装进口,免费送样品!	询价
深圳市美思瑞电子科技有限公司	SST29EE020	SST	22+	PLCC	12245	现货,原厂原装假一罚十!	询价
深圳市福田区绿盛电子商行	SST29EE020	SST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市壹芯创科技有限公司	SST29EE020	SST	22+	PLCC	2000	原装正品现货	询价
深圳市一线半导体有限公司	SST29EE020		24+		50	本站现库存	询价

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SST25WF040B-40I/SN

SST26VF016BT-80E/SM

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SST39VF1601-70-4I-EKE

SST39VF040-70-4C-NHE

SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货

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